Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.
|Original language||English (US)|
|Title of host publication||ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems|
|Publisher||American Society of Mechanical Engineers|
|State||Published - Dec 11 2020|