Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams

Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.
Original languageEnglish (US)
Title of host publicationASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
PublisherAmerican Society of Mechanical Engineers
ISBN (Print)9780791884041
DOIs
StatePublished - Dec 11 2020

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