Light-induced degradation of very low resistivity multi-crystalline silicon solar cells

Stefaan De Wolf, P. Choulat, J. Szlufcik, I. Périchaud, S. Martinuzzi, C. Häßler, W. Krumbe

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

An JSc degradation under illumination has been measured for finished solar cells processed from multicrystalline B-doped Si-substrates with resistivities below 0.1 ßcm. This phenomenon has been studied as function of the different applied processing steps and as function of the boron- and oxygen-concentration of the substrate. The observed effect is likely related to a reversible formation of boron-oxygen complexes, introducing traps in the bandgap. This behaviour is similar to what has been reported in literature for carrier lifetime instabilities of 1Ωcm Cz-Si. The degradation was found to be fully reversible by a low-temperature anneal at about 200°C, provided that the degradation causing defects have not been passivated by hydrogénation.

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages53-56
Number of pages4
ISBN (Electronic)0780357728
DOIs
StatePublished - Jan 1 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2000-January
ISSN (Print)0160-8371

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period09/15/0009/22/00

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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