Light emission tuning of In0.5Ga0.5As/In0.05Ga0.95As quantum dots by a two-dimensional photonic crystal

V. Vitale*, M. T. Todaro, T. Stomeo, E. Margapoti, A. Passaseo, M. De Giorgi, M. De Vittorio, R. Cingolani, F. Romanato, P. Candeloro, Enzo Di Fabrizio

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.

Original languageEnglish (US)
Pages (from-to)832-837
Number of pages6
JournalMicroelectronic Engineering
StatePublished - Jun 1 2003
EventProceedings of the 28th International Conference on MNE - Lugano, Switzerland
Duration: Sep 16 2002Sep 19 2002


  • Nanotechnology
  • Photonic crystals
  • Photonic devices
  • Quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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