Ligand stabilised dialkyl aluminium amides as new precursors for aluminium nitride thin films

Jayaprakash Khanderi, Daniel Rische, Hans W. Becker, Roland A. Fischer*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Ligand stabilised aluminium amides of the type Me2Al[NR′ (CH2)2NR2] where R = Me and R′ = Et (1) are synthesised using HNEt(CH2)2NMe2 (1a) via an alkane elimination reaction, with an equimolar mixture of Lewis acid (trimethylaluminium) and Lewis base (substituted ethylenediamine 1a), in the absence of solvent. The product is a colourless liquid having relatively high vapour pressure as indicated by TGA. Metalorganic chemical vapour deposition (MOCVD) of the precursor in the presence of ammonia carried out in temperature range of 500-950 °C resulted in crystalline A1N films. The self decomposition (without ammonia) of the precursor under MOCVD conditions resulted in aluminium (carbo) nitride films having the composition A1:N:C 1:0.7.0.6 (±0.1) above 600 °C using N2 and H2 as carrier gas.

Original languageEnglish (US)
Pages (from-to)3210-3214
Number of pages5
JournalJournal of Materials Chemistry
Volume14
Issue number21
DOIs
StatePublished - Nov 7 2004
Externally publishedYes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Materials Chemistry
  • Materials Science(all)

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