Leakage mechanism in Cu damascene structure with methylsilane-doped low-k CVD oxide as intermetal dielectric

Zhen Cheng Wu*, Chiu Chih Chiang, Wei Hao Wu, Mao Chieh Chen, Shwang Ming Jeng, Lain-Jong Li, Syun Ming Jang, Chen Hua Yu, Mong Song Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD). The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL). In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG. An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.

Original languageEnglish (US)
Pages (from-to)263-265
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number6
DOIs
StatePublished - Jun 1 2001

Keywords

  • CVD oxides
  • Copper
  • Damascene structures
  • Frenkel-Poole (F-P) emission
  • Low-k dielectrics
  • Methylsilane
  • Organosilicate glass (OSG)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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