Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

Ping Wang, Ying Yuan, Chao Zhao, Xinqiang Wang, Xiantong Zheng, Xin Rong, Tao Wang, Bowen Sheng, Qingxiao Wang, Yongqiang Zhang, Lifeng Bian, Xue-Lin Yang, Fu-Jun Xu, Zhixin Qin, Xin-Zheng Li, Xixiang Zhang, Bo Shen

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.
Original languageEnglish (US)
Pages (from-to)1328-1334
Number of pages7
JournalNano Letters
Volume16
Issue number2
DOIs
StatePublished - Jan 6 2016

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