La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories

B. A. Tuttle*, H. N. Al-Shareef, W. L. Warren, M. V. Raymond, T. J. Headley, J. A. Voigt, J. Evans, R. Ramesh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O3 (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La0.5Sr0.5CoO3 (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO2 electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 1010 cycles.

Original languageEnglish (US)
Pages (from-to)223-230
Number of pages8
JournalMicroelectronic Engineering
Volume29
Issue number1-4
DOIs
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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