Photoluminescence (PL) of annealed GaInNAs quantum well (QW) with varying temperature and laser excitation intensity is measured to understand the low temperature PL properties of annealed 6 nm GaInNAs QW. The measurements show that localization effect still exist in the QW even after annealing. This effect is characterized by an activation energy of 11 meV below the e1 state, which is obtained from fitting the integrated PL intensity vs. temperature curve with a single-activation-energy (SAE) model. This center is suggested to be related to the main localization center below the el state that could be resulted by N or In compositional fluctuation even after annealing.
|Original language||English (US)|
|Number of pages||5|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2003|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials