Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition

H. Wang*, L. Yu, Y. H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, Lain-Jong Li, J. Kong, T. Palacios

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

37 Scopus citations

Abstract

2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs
StatePublished - Dec 1 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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