Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

W. B. Mi, Zaibing Guo, X. F. Duan, X. J. Zhang, H. L. Bai

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4 Scopus citations

Abstract

Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2 = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2 = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.
Original languageEnglish (US)
Pages (from-to)222411
JournalApplied Physics Letters
Volume102
Issue number22
DOIs
StatePublished - Jun 8 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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