Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

Kazuhide Kusakabe*, Shizutoshi Ando, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The lattice orientation of epitaxial GaN films grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy was investigated. It is generally known that nonpolar a-plane GaN layers are grown on r-plane sapphire substrates. However, high-resolution X-ray diffraction revealed the large misorientation of GaN grown on r-plane sapphire when the growth temperature was increased from1100 °C to 1150 °C. The c-axis was oriented to 25° from the surface normal toward the (1̄ 1 0 1)Sapphire orientation. In addition, the GaN grown at 1150 °C indicated crystal twinning. These results were attributed to the anisotropic strain that was enhanced by higher growth temperature.

Original languageEnglish (US)
Pages (from-to)293-296
Number of pages4
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
StatePublished - Jan 1 2007

Keywords

  • A1. Pole figure
  • A3. MOVPE
  • B1. GaN

ASJC Scopus subject areas

  • Condensed Matter Physics

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