Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

Mohammed Abdul Majid, Ahmad Al-Jabr, Rami T. Elafandy, Hassan M. Oubei, Dalaver H. Anjum, Mohamed Shehata, Tien Khee Ng, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ~250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ~46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.
Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers XVIII
PublisherSPIE spie@spie.org
ISBN (Print)9781510625204
DOIs
StatePublished - Mar 1 2019

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