Large-area WSe2 electric double layer transistors on a plastic substrate

Kazuma Funahashi, Jiang Pu, Ming-yang Li, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.
Original languageEnglish (US)
Pages (from-to)06FF06
JournalJapanese Journal of Applied Physics
Volume54
Issue number6S1
DOIs
StatePublished - Apr 27 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Large-area WSe2 electric double layer transistors on a plastic substrate'. Together they form a unique fingerprint.

Cite this