Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Stefaan De Wolf*, Christophe Ballif, Michio Kondo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Low-temperature annealing of hydrogenated amorphous silicon (a-Si:H) is investigated. An identical energy barrier is found for the reduction of deep defects in the bulk of a-Si:H films and at the interface such layers form with crystalline Si (c-Si) surfaces. This finding gives direct physical evidence that the defects determining a-Si:H/c-Si interface recombination are silicon dangling bonds and that also kinetically this interface has no unique features compared to the a-Si:H bulk.

Original languageEnglish (US)
Article number113302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number11
DOIs
StatePublished - Mar 19 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this