Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes

T. S. Shafai*, Thomas Anthopoulos

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

75 Scopus citations

Abstract

The d.c. electrical properties of gold/nickel phthalocyanine/indium (Au/NiPc/In) thin film structures have been investigated. Three-layered devices were fabricated utilising a sequential vacuum sublimation technique. At low voltages, current density in the forward direction was found to obey the diode equation, while for higher voltage levels, conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. In the reverse bias direction a transition from electrode-limited to a bulk-limited conduction process was identified. After prolonged exposure of the sample to dry air a weak polarity dependence of conduction was observed. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. After annealing of the samples at 393 K in vacuum for 20 min, a strong rectifying behaviour was evident. Results were interpreted in terms of an O2 adsorption process at the NiPc/In interface. Hole trapping parameters together with various junction properties have been also reported and analysed.

Original languageEnglish (US)
Pages (from-to)361-367
Number of pages7
JournalThin Solid Films
Volume398-399
DOIs
StatePublished - Nov 1 2001
Event28th International Conference on Metallurgia - San Diego,CA, United States
Duration: Apr 30 2001May 30 2001

Keywords

  • Au/NiPc/In thin film structures
  • Three-layered devices
  • d.c. electrical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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