Ion beam studies on reactive DC sputtered manganese doped indium tin oxide thin films

Sarath Kumar Santhakumari Amma Ravindran Nair, P. Malar, Thomas Osipowicz, S. S. Banerjee, S. Kasiviswanathan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Indium based transparent conducting oxides doped with magnetic elements have been studied intensively in recent years with a view to develop novel ferromagnetic semiconductors for spin-based electronics. In the present work, we have grown manganese doped indium tin oxide (Mn:ITO) thin films, onto Si and Si/SiO 2 substrates by DC reactive sputtering of a composite target containing indium-tin alloy and manganese, in a gas mixture of oxygen and argon. Glancing angle X-ray diffraction (GXRD) studies reveal the polycrystalline nature of the films. Magnetic measurements carried out using vibrating sample magnetometer (VSM) suggest that the films are ferromagnetic at room temperature, with a saturation magnetization of ∼22.8 emu/cm 3 . The atomic percentages of In, Sn, Mn and O, as estimated using Rutherford backscattering spectrometry (RBS) are 37.0, 4.0, 1.6 and 57.4, respectively. RBS measurements reveal that the interface of the films with Si substrate has a ∼30 nm thick intermediate layer. This layer consists of oxygen, silicon, indium, tin and manganese, in the ratio 1:0.56:0.21:0.07:0.03, indicative of diffusion of elements across the interface. The films on Si/SiO 2 , on the other hand, have a sharp interface.

Original languageEnglish (US)
Pages (from-to)1421-1424
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume266
Issue number8
DOIs
StatePublished - Apr 1 2008

Keywords

  • DMS
  • Interface
  • TCO
  • Thin films

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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