Investigation on mc-Si bulk passivation using deuterated silicon-nitride

H. F.W. Dekkers*, Stefaan De Wolf, G. Agostinelli, J. Szlufcik, T. Pernau, W. M. Arnoldbik, H. D. Goldbach, R. E.I. Schropp

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

To investigate the passivation mechanism of thermally treated PECVD hydrogenated silicon nitride, hydrogen is replaced by deuterium, using deuterated gases during deposition. No difference in passivativing properties between both silicon nitride layers are observed. SIMS and ERD show that deuterium is diffusing directly from the silicon nitride layers during a thermal treatment, however the involved concentrations are very low. The amount of deuterium, diffusing deep into the bulk is below detection limit. This determines upper limits on both concentration and possible types of defects that are passivated.

Original languageEnglish (US)
Title of host publicationProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
EditorsK. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages983-986
Number of pages4
StatePublished - Dec 1 2003
EventProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
Duration: May 11 2003May 18 2003

Publication series

NameProceedings of the 3rd World Conference on Photovoltaic Energy Conversion
VolumeA

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period05/11/0305/18/03

ASJC Scopus subject areas

  • Engineering(all)

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