Investigation of the detailed structure of atomically sharp Ge/SiO2 interfaces

Tao Liang, W. Windl, Sergei Lopatin, G. Duscher

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations

    Abstract

    The atomic structure of the interface between Ge and SiO2 - fabricated by oxidation of Ge-implanted Si - was studied using a combination of density-functional and kinetic-Monte Carlo simulations with atomic-resolution Z-contrast imaging and electron energy-loss spectroscopy with an experimental resolution close to the quantum-mechanical limit. The combination of experimental and theoretical results is consistent with the model of an atomically abrupt Ge/SiO2 interface with probably small fractions of Ge in the oxide.

    Original languageEnglish (US)
    Title of host publicationSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages143-146
    Number of pages4
    ISBN (Electronic)0780378261
    DOIs
    StatePublished - Jan 1 2003
    Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
    Duration: Sep 3 2003Sep 5 2003

    Publication series

    NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
    Volume2003-January

    Other

    Other2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
    CountryUnited States
    CityBoston
    Period09/3/0309/5/03

    Keywords

    • Atomic measurements
    • Educational institutions
    • Electrons
    • Image resolution
    • Impurities
    • Materials science and technology
    • Oxidation
    • Power engineering and energy
    • Semiconductor process modeling
    • Substrates

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Computer Science Applications
    • Modeling and Simulation

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