Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation

Katsushi Fujii*, Takashi Ito, Masato Ono, Yasuhiro Iwaki, Takafumi Yao, Kazuhiro Ohkawa

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

Surface morphology and chemical composition at n-type GaN surface after photoelectrochemical reactions were investigated. Whisker-like Ga oxides were observed in the lower pH solutions and hexagonal columns were observed in the higher pH solutions. The results indicate that different reactions occur in the different pH solutions. Dissolution amount was the lowest at a neutral pH solution.

Original languageEnglish (US)
Pages (from-to)2650-2653
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number7
DOIs
StatePublished - Dec 1 2007
EventInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
Duration: Oct 22 2006Oct 27 2006

ASJC Scopus subject areas

  • Condensed Matter Physics

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