Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

W. K. Cheah, W. J. Fan*, S. F. Yoon, Tien Khee Ng, W. K. Loke, D. H. Zhang, T. Mei, R. Liu, A. T.S. Wee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.

Original languageEnglish (US)
Pages (from-to)440-447
Number of pages8
JournalJournal of Crystal Growth
Volume275
Issue number3-4
DOIs
StatePublished - Mar 1 2005

Keywords

  • A1. High resolution X-ray diffraction
  • A1. Photoluminescence
  • A1. Secondary ion mass spectroscopy
  • A3. Molecular beam epitaxy
  • B1. GaAsN
  • B1. InGaAsN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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