Investigation of growth mechanism for ingan by metal-organic vapor phase epitaxy using computational fluid simulation

Momoko Deura, Fumitaka Ichinohe, Yu Arai, Kenichi Shiohama, Akira Hirako, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

Abstract

We investigated the mechanism of metal-organic vapor phase epitaxy (MOVPE) growth for InGaN by comparing experimental and simulation results. The simulation results showed a similar trend to the experimental results. Therefore, the simulation system can be used to speculate on physical and chemical phenomena through the behavior of precursors. InGaN growth is largely affected by the amounts of both trimethylindium (TMIn) and NH3 supplied. This is because InN growth is dependent on the amount of NH2 physisorbed on a surface, which is generated by NH3. Moreover, the decomposition of crystallized InN and the desorption of these decomposed precursors of InN during growth cannot be ignored.

Original languageEnglish (US)
Article number08JB13
JournalJapanese Journal of Applied Physics
Volume52
Issue number8 PART 2
DOIs
StatePublished - Aug 2013
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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