Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun*, Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Scopus citations

Abstract

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Original languageEnglish (US)
Article number081104
JournalApplied Physics Letters
Volume99
Issue number8
DOIs
StatePublished - Aug 22 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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