Investigation of a novel AlZnN semiconductor alloy

A. Trapalis, P. W. Fry, Kenneth Leslie Kennedy, I. Farrer, A. Kean, J. Sharman, J. Heffernan

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
    Original languageEnglish (US)
    Pages (from-to)100052
    JournalMaterials Letters: X
    Volume7
    DOIs
    StatePublished - Jul 20 2020

    Fingerprint

    Dive into the research topics of 'Investigation of a novel AlZnN semiconductor alloy'. Together they form a unique fingerprint.

    Cite this