Inverse problems for semiconductors: models and methods

A. Leitão, Peter Markowich, J. P. Zubelli

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].

Original languageEnglish (US)
Title of host publicationModeling and Simulation in Science, Engineering and Technology
PublisherSpringer Basel
Pages117-149
Number of pages33
Edition9780817644895
DOIs
StatePublished - Jan 1 2007

Publication series

NameModeling and Simulation in Science, Engineering and Technology
Number9780817644895
ISSN (Print)2164-3679
ISSN (Electronic)2164-3725

ASJC Scopus subject areas

  • Modeling and Simulation
  • Engineering(all)
  • Fluid Flow and Transfer Processes
  • Computational Mathematics

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