Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics

H. N. Alshareef*, H. Niimi, A. Varghese, M. Bevan, R. Kuan, J. Holt, P. Tiner, R. Khamankar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The impact of nitrogen concentration on nitrided gate dielectric scaling has been found to depend on the process conditions used to incorporate nitrogen. For example, the variation in the nitrogen content of gate dielectrics processed at high pressure (>107 Pa) has a strong impact on gate leakage current, but not on equivalent oxide thickness. While this effect allows nearly independent control of gate leakage and drive currents of the device, it prevents scaling of the gate dielectric. In contrast, it is found that at low process pressures (<13 Pa) the gate dielectric behaves in a more conventional fashion, where both electrical oxide thickness and film leakage change with film nitrogen content. A model is proposed to explain this behavior based on an intrinsic reoxidation process. Chemical bond analysis results are presented to support the proposed model.

Original languageEnglish (US)
Article number132901
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
StatePublished - Mar 28 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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