Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

B. H. Lee*, C. D. Young, R. Choi, J. H. Sim, G. Bersuker, C. Y. Kang, R. Harris, G. A. Brown, K. Matthews, S. C. Song, N. Moumen, J. Barnett, P. Lysaght, K. S. Choi, H. C. Wen, C. Huffman, Husam Niman Alshareef, P. Majhi, S. Gopalan, J. PetersonP. Kirsh, H. J. Li, J. Gutt, M. Gardner, H. R. Huff, P. Zeitzoff, R. W. Murto, L. Larson, C. Ramiller

*Corresponding author for this work

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