Intrinsic characteristics of high-k devices and implications of Fast Transient Charging Effects (FTCE)

B. H. Lee*, C. D. Young, R. Choi, J. H. Sim, G. Bersuker, C. Y. Kang, R. Harris, G. A. Brown, K. Matthews, S. C. Song, N. Moumen, J. Barnett, P. Lysaght, K. S. Choi, H. C. Wen, C. Huffman, Husam Niman Alshareef, P. Majhi, S. Gopalan, J. PetersonP. Kirsh, H. J. Li, J. Gutt, M. Gardner, H. R. Huff, P. Zeitzoff, R. W. Murto, L. Larson, C. Ramiller

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

51 Scopus citations

Abstract

Fast transient charging effects (FTCE) are found to be the source of various undesirable characteristics of high-k devices, such as Vth instability, low DC mobility and poor reliability. The intrinsic characteristics of high-k transistors free from FTCE are demonstrated using ultra-short pulsed I-V measurements, and it is found that the intrinsic mobility of high-k devices can be much higher than what has been observed in DC based measurements. The FTCE model suggests that many of DC characterization methods developed for SiO2 devices are not sufficiently adequate for high-k devices that exhibit significant transient charging. The existence of very strong concurrent transient charging during various reliability tests also degrades the validity of test results. Finally, the implication of FTCE on the high-k implementation strategy is discussed.

Original languageEnglish (US)
Pages (from-to)859-862
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - Dec 1 2004
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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