Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing

V. Hongpinyo*, Y. H. Ding, C. E. Dimas, Y. Wang, Boon Ooi, W. Qiu, L. L. Goddard, E. M. Behymer, G. D. Cole, T. C. Bond

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800 °C which is below activation temperature.

Original languageEnglish (US)
Title of host publication2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs
StatePublished - Dec 1 2008
Event2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore
Duration: Dec 8 2008Dec 11 2008

Publication series

Name2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Other

Other2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
CountrySingapore
CitySingapore
Period12/8/0812/11/08

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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