Intermixing effects on emission properties of InGaN/GaN coupled Quantum wells

Tri B. Susilo, M. A. Alsunaidi, Chao Shen, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Intermixing processes in quantum wells have been extensively studied in order to modify characteristic of semiconductor devices such as LEDs. Controlling the band gap of material by introducing intermixing process can be used to enable broadband and controllable emission of LEDs. Quantum well intermixing (QWI) in InGaN/GaN double quantum well (DQW) is discussed in this paper. By varying the interdiffusion and separation lengths, the effects of intermixing process on the quantum eigen energies of the wells are studied. The investigation is carried out using a homegrown Quantum-FDTD simulator. © 2015 IEEE.
Original languageEnglish (US)
Title of host publication2015 IEEE 8th GCC Conference & Exhibition
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)9781479984220
DOIs
StatePublished - Feb 2015

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