Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

Qiang Zhang, Peng Li, Yan Wen, Xin He, Yuelei Zhao, Junli Zhang, Xixiang Zhang

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Abstract

The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the ${{\left(\text{N}{{\text{i}}_{\frac{36}{n}~\text{nm}}}/\text{A}{{\text{u}}_{\frac{12}{n}~\text{nm}}}\right)}_{n}}$ multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (${{\rho}_{\text{AHE}}}$ ) was enhanced by more than six times at 5 K from n €‰ €‰= €‰ €‰1 to n €‰ €‰= €‰ €‰12 due to the increased interfacial scattering, whereas the longitudinal resistivity (${{\rho}_{xx}}$ ) was increased nearly three times. A scaling relation ${{\rho}_{\text{AHE}}}\sim \rho _{xx}^{\gamma}$ with $\gamma =1.85$ was obtained for ${{\rho}_{\text{AHE}}}$ and ${{\rho}_{xx}}$ measured at 5 €‰K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation ${{\rho}_{\text{AHE}}}=\alpha {{\rho}_{xx0}}+\beta \rho _{xx0}^{2}+b\rho _{xx}^{2}$ (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.
Original languageEnglish (US)
Pages (from-to)235002
JournalJournal of Physics D: Applied Physics
Volume50
Issue number23
DOIs
StatePublished - May 16 2017

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