Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers

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26 Scopus citations

Abstract

Effective work function (EWF) changes of TiN/HfO2annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2interface cause the formation of dipoles that increase the EWF.
Original languageEnglish (US)
Pages (from-to)103502
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - Mar 9 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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