Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

Zirun Li, Wenbo Mi, Xiaocha Wang, Xixiang Zhang

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.
Original languageEnglish (US)
Pages (from-to)3840-3845
Number of pages6
JournalACS Applied Materials & Interfaces
Volume7
Issue number6
DOIs
StatePublished - Feb 9 2015

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