Interface Engineering for Precise Threshold Voltage Control in Multilayer-Channel Thin Film Transistors

Jihoon Park, Fwzah Hamud Alshammari, Zhenwei Wang, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Multilayer channel structure is used to effectively manipulate the threshold voltage of zinc oxide transistors without degrading its field-effect mobility. Transistors operating in enhancement mode with good mobility are fabricated by optimizing the structure of the multilayer channel. The optimization is attributed to the formation of additional channel and suppression of the diffusion of absorbed water molecules and oxygen vacancies.
Original languageEnglish (US)
Pages (from-to)1600713
JournalAdvanced Materials Interfaces
Volume3
Issue number24
DOIs
StatePublished - Nov 29 2016

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