Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

R. P. Gupta, O. D. Iyore, K. Xiong, J. B. White, Kyeongjae Cho, Husam N. Alshareef, B. E. Gnade

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.
Original languageEnglish (US)
Pages (from-to)H395
JournalElectrochemical and Solid-State Letters
Volume12
Issue number10
DOIs
StatePublished - Aug 13 2009

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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