A. new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of material is still high after intermixing. Losses as low as 18dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers.
- Integrated circuits
- Ion beam effects
- Plasma techniques
- Semiconductor Junction lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering