Integration process for photonic integrated circuits using plasma damage induced layer intermixing

B. S. Ooi, A. C. Bryce, J. H. Marsh

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

A. new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of material is still high after intermixing. Losses as low as 18dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers.

Original languageEnglish (US)
Pages (from-to)449-451
Number of pages3
JournalElectronics Letters
Volume31
Issue number6
DOIs
StatePublished - Mar 16 1995
Externally publishedYes

Keywords

  • Integrated circuits
  • Ion beam effects
  • Plasma techniques
  • Semiconductor Junction lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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