Integration of iii-nitride nanowire on transparent conductive substrates for optoelectronic and electronic devices

Boon S. Ooi (Inventor), Aditya Prabaswara (Inventor), Bilal Janjua (Inventor), Tien Khee Ng (Inventor)

Research output: Patent

Abstract

A dislocation-free GaN/InGaN-based nanowires-LED epitaxially grown on a transparent, electrically conductive template substrate. The simultaneous transparency and conductivity are provided by a thin, translucent metal contact integrated with a quartz substrate. The light transmission properties of the translucent metal contact are tunable during epitaxial growth of the nanowires LED. Transparent light emitting diodes (LED) devices, optical circuits, solar cells, touch screen displays, and integrated photonic circuits can be implemented using the current platform.
Original languageEnglish (US)
Patent numberUS20180248077A1
StatePublished - Aug 30 2018

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