Integration of dual metal gate CMOS with TaSiN (NMOS) and Ru (PMOS) gate electrodes on HfO 2 gate dielectric

Z. B. Zhang*, S. C. Song, C. Huffman, J. Barnett, N. Moumen, Husam Niman Alshareef, P. Majhi, Muhammad Mustafa Hussain, M. S. Akbar, J. H. Sim, S. H. Bae, B. Sassman, B. H. Lee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

32 Scopus citations

Abstract

We report the process module development results and device characteristics of dual metal gate CMOS with TaSiN and Ru gate electrodes on HfO 2 gate dielectric. The wet etch of TaSiN had a minimal impact on HfO 2 (ΔEOT<1Å). A plasma etch process has been developed to etch Ru/TaN/Poly (PMOS) and TaSiN/Ru/TaN/Poly (NMOS) gate stacks simultaneously. Well behaved dual metal gate CMOS transistors have been demonstrated with L g down to 85nm.

Original languageEnglish (US)
Title of host publication2005 Symposium on VLSI Technology, Digest of Technical Papers
Pages50-51
Number of pages2
DOIs
StatePublished - Dec 1 2005
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: Jun 14 2005Jun 14 2005

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
ISSN (Print)0743-1562

Other

Other2005 Symposium on VLSI Technology
CountryJapan
CityKyoto
Period06/14/0506/14/05

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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