Integration of Cu-CMP process with combination of abrasive-free copper polishing and low selective barrier polishing for 90nm Cu/low-k interconnect

Xianbin Wang*, Juan Boon Tan, Yong Kong Siew, Bei Chao Zhang, Wu Ping Liu, Fan Zhang, Lup San Leong, Raymond Joy, Liang Choo Hsia

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    Process integration study of a copper CMP process combining a high selective abrasive-free slurry copper polishing followed by a low selective abrasive slurry barrier metal polishing for 90nm Cu/low-k interconnect metallization is reported. We demonstrated well-controlled dishing and erosion, tight control of dielectric loss and copper thinning with this process. Desired electrical results such as low comb leakage, good meander continuity and low VDP (Van Der Pauw) sheet resistance were also realized. V-ramp tests further confirmed the robustness of this integration scheme. The CMP process characterization and challenges of incorporating this combined copper CMP process into the 90nm BEOL integration are also discussed.

    Original languageEnglish (US)
    Pages (from-to)571-576
    Number of pages6
    JournalAdvanced Metallization Conference (AMC)
    StatePublished - Dec 1 2004
    EventAdvanced Metallization Conference 2004, AMC 2004 - San Diego, CA, United States
    Duration: Oct 19 2004Oct 21 2004

    ASJC Scopus subject areas

    • Chemical Engineering(all)

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