InP-based quantum dash broadband emitters

C. L. Tan, C. Chen, J. C.M. Hwang, Boon Ooi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Semiconductor broadband light sources are greatly in demand for highly-sensitive sensing, spectroscopy, optical telecommunications, eye-safe low-speckle sources for flash lidar and high resolution bio-imaging particularly optical coherence tomography (OCT). In this paper, we report on the observation of broadband lasing action from the InAs/InAIGaAs quantum dash (Qdash) structure. This novel device exhibits lasing action with emission wavelength coverage over 60nm at the center wavelength around ∼1.60 urn, By applying the quantum-dash intermixing (QDI) technique to the same material structure, we have successfully tuned the center lasing wavelength of the Qdash broadband laser to 1.54 μm and broadened its emission coverage over 80 nm, making it an attractive source for many novel applications in optical communications. The intrinsic response of Qdash lasers under optical modulation has been studied.

Original languageEnglish (US)
Title of host publicationWOCC 2009 - 18th Annual Wireless and Optical Communications Conference
DOIs
StatePublished - Dec 1 2009
EventWOCC 2009 - 18th Annual Wireless and Optical Communications Conference - Newark, NJ, United States
Duration: May 1 2009May 2 2009

Publication series

NameWOCC 2009 - 18th Annual Wireless and Optical Communications Conference

Other

OtherWOCC 2009 - 18th Annual Wireless and Optical Communications Conference
CountryUnited States
CityNewark, NJ
Period05/1/0905/2/09

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Communication

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