In summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
|Original language||English (US)|
|Title of host publication||2013 IEEE Photonics Conference|
|Publisher||Institute of Electrical and Electronics Engineers (IEEE)|
|Number of pages||2|
|State||Published - Nov 11 2013|