InGaN micro-LED-pillar as the building block for high brightness emitters

Chao Shen, Dong Kyu Cha, Tien Khee Ng, Boon S. Ooi, Yang Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

In summary, we confirmed the improved electrical and optical characteristics, with reduced efficiency droop in InGaN μLED-pillars when these devices were scaled down in size. We demonstrated that strain relief contributed to further improvement in EQE characteristics in small InGaN μLED-pillars (D < 50 μm), apart from the current spreading effect. The μLED-pillar can be deployed as the building block for large effective-area, high brightness emitter. © 2013 IEEE.
Original languageEnglish (US)
Title of host publication2013 IEEE Photonics Conference
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages174-175
Number of pages2
ISBN (Print)9781457715075
DOIs
StatePublished - Nov 11 2013

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