InGaN-based red light-emitting diodes: from traditional to micro-LEDs

Zhe Zhuang, Daisuke Iida, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

Abstract

InGaN-based light-emitting diodes (LEDs) are efficient light sources in the blue-green light range and have been successfully commercialized in the last decades. Extending their spectral range to the red region causes a significant reduction in LED efficiency. This challenge hinders the integration of red, green, and blue LEDs based on III-nitride materials, especially for full-color micro-LED displays. We review our recent progress on InGaN-based red LEDs with different chip sizes from hundreds to tens of micrometers, including the epitaxial structures, device fabrication, and optical performance (peak wavelength, full-width at half-maximum, light output power, efficiency, temperature stability, and color coordinates.
Original languageEnglish (US)
JournalJapanese Journal of Applied Physics
DOIs
StatePublished - Aug 2 2021

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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