We report on the design and fabrication of a novel wideband superluminescent diode (SLD) based on InGaAs/GaAs quantum-dot structure. In this device, we monolithically integrate a photon absorber section to suppress lasing action and optical feedback oscillation. The fabricated SLDs produce a close-to-Gaussian shaped spectrum centered at 1210 nm with a bandwidth of 135 nm. Spectral ripple as low as 0.3 dB has been measured.
- Broadband light source
- optical coherence tomography (OCT)
- quantum dot (QD)
- superluminescent diode
ASJC Scopus subject areas
- Electrical and Electronic Engineering