InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering

H. S. Djie, B. S. Ooi*, V. Aimez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Fingerprint

Dive into the research topics of 'InGaAs/GaAs quantum-dot intermixing using arsenic and phosphorus ion implantation-induced disordering'. Together they form a unique fingerprint.

Physics & Astronomy