Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

B. H. Hamadani*, C. A. Richter, D. J. Gundlach, R. J. Kline, Iain Mcculloch, M. Heeney

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

We report on a strong field-dependent mobility in organic field-effect transistors fabricated by using poly(2,5-bis(3-tetradecylthiophene-2-yl) thieno[3,2-b]thiophene) (pBTTT-C14) as the active polymer layer. Charge transport and mobilities in devices annealed in the mesophase show a more pronounced dependence on channel length as compared with as-cast devices. Analysis reveals that the contact effects in both sets of devices are negligible from room temperature down to ≈100 K. We show that this field dependence is consistent with a Poole-Frenkel model of mobility. Finally, the nonlinear transport data for short channel devices are modeled consistently in the Poole-Frenkel framework over a broad temperature range.

Original languageEnglish (US)
Article number044503
JournalJournal of Applied Physics
Volume102
Issue number4
DOIs
StatePublished - Sep 7 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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