Influence of intensive light exposure on polymer field-effect transistors

J. Ficker*, H. Von Seggern, H. Rost, W. Fix, W. Clemens, Iain Mcculloch

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

The influence of intensive light exposure under ambient atmosphere on nonencapsulated high-performance polymer field-effect transistors containing regioregular semiconducting polymer was investigated. Electrical measurements using UV-Vis spectroscopy showed that the decrease of the field-effect mobility corresponds to a reduction of the conjugation within the semiconductor poly(3-alkylthiophene) (P3HT). The role of ambient air - oxygen in the degradation process was also investigated. The results of the IR spectrometry technique indicate that distinct changes in the chemical structure of regioregular P3HT under the influence of both intensive light exposure and the presence of oxygen.

Original languageEnglish (US)
Pages (from-to)1377-1379
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number8
DOIs
StatePublished - Aug 23 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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