Influence of Ga+ ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve

Z. B. Guo*, D. You, J. J. Qiu, K. B. Li, Y. H. Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The spin valve with the structure of IrMn/CoFe/Cu/CoFe/NiFe has been patterned to be a wire with four current-voltage probes. The detailed study of the influence of 30 KeV focused Ga+ ion beam irradiation on the magnetoresistance and exchange bias on the patterned sample has been carried out. With an increase in the ion dose, magnetoresistance and exchange bias have been found to be decreasing, and resistance has been found to be increasing. At low doses (≤1.05 × 1015 ions/cm2), the alternation in resistance is mainly attributed to atomic mixing in the interfacial regions induced by Ga+ ion irradiation. However, at high doses (≥3.51 × 1015 ions/cm2), the bulk defects generated by Ga+ ion irradiation have a significant effect on the increase of resistance. At the dose of 3.51 × 1015 ions/cm2 both GMR and AMR behaviors have been observed.

Original languageEnglish (US)
Pages (from-to)459-462
Number of pages4
JournalSolid State Communications
Volume120
Issue number11
DOIs
StatePublished - Nov 19 2001
Externally publishedYes

Keywords

  • A. Magnetic films and multilayers
  • B. Iradiation effects

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Influence of Ga<sup>+</sup> ion irradiation on magnetoresistance and exchange bias of IrMn/CoFe/Cu/CoFe/NiFe spin valve'. Together they form a unique fingerprint.

Cite this