The influence of thick (∼10 nm) AlN overlayers on the interface structure and reactions in Si gate stacks with HfO 2 dielectrics was investigated. Annealing caused a reduction of the interfacial SiO 2 at the Si interface. At high temperatures (∼1000 °C) a silicide reaction was observed at the HfO 2/Si interface. No reactions were observed for stacks processed similarly but with WN or TiN overlayers instead of AlN. The reaction mechanisms, in particular, the role of oxygen deficiency of the HfO 2, and the consequences for the electrical properties are discussed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)