Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

Kuang-Hui Li, Hamad S. Alotaibi, Haiding Sun, Ronghui Lin, Wenzhe Guo, Carlos G. Torres-Castanedo, Kaikai Liu, Sergio V. Galan, Xiaohang Li

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In a conventional induction-heating III-nitride metalorganic chemical vapor deposition (MOCVD) reactor, the induction coil is outside the chamber. Therefore, the magnetic field does not couple with the susceptor well, leading to compromised heating efficiency and harmful coupling with the gas inlet and thus possible overheating. Hence, the gas inlet has to be at a minimum distance away from the susceptor. Because of the elongated flow path, premature reactions can be more severe, particularly between Al- and B-containing precursors and NH3. Here, we propose a structure that can significantly improve the heating efficiency and allow the gas inlet to be closer to the susceptor. Specifically, the induction coil is designed to surround the vertical cylinder of a T-shaped susceptor comprising the cylinder and a top horizontal plate holding the wafer substrate within the reactor. Therefore, the cylinder coupled most magnetic field to serve as the thermal source for the plate. Furthermore, the plate can block and thus significantly reduce the uncoupled magnetic field above the susceptor, thereby allowing the gas inlet to be closer. The results show approximately 140% and 2.6 times increase in the heating and susceptor coupling efficiencies, respectively, as well as a 90% reduction in the harmful magnetic flux on the gas inlet.
Original languageEnglish (US)
Pages (from-to)16-22
Number of pages7
JournalJournal of Crystal Growth
Volume488
DOIs
StatePublished - Feb 23 2018

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