Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

Pradipta K. Nayak, Zhenwei Wang, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.
Original languageEnglish (US)
Pages (from-to)7736-7744
Number of pages9
JournalAdvanced Materials
Volume28
Issue number35
DOIs
StatePublished - Jul 4 2016

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