Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

Hsin-Ping Wang, Carolin M. Sutter-Fella, Peter Lobaccaro, Mark Hettick, Maxwell Zheng, Der-Hsien Lien, D. Westley Miller, Charles W. Warren, Ellis T Roe, Mark C Lonergan, Harvey L. Guthrey, Nancy M. Haegel, Joel W. Ager, Carlo Carraro, Roya Maboudian, Jr-Hau He, Ali Javey

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The thin-film vapor-liquid-solid (TF-VLS) growth technique presents a promising route for high quality, scalable and cost-effective InP thin films for optoelectronic devices. Towards this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy were used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces the intra-gap defect density by one order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (VOC) of individual TF-VLS InP solar cells by up to 130 mV, and reduced the variance in VOC for the analyzed devices.
Original languageEnglish (US)
Pages (from-to)4602-4607
Number of pages6
JournalChemistry of Materials
Volume28
Issue number13
DOIs
StatePublished - Jun 23 2016

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